Resistive switching memory device architecture for reduced cell damage during processing

• Main Author: Kwan Ming Sang
• Format: Patent
• Language: English
• Published: 06.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

In one embodiment, a resistive switching memory device can include: (i) a plurality of resistive memory cells arranged in a plurality of array blocks, where each resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direc...