Protected through semiconductor via (TSV)

A semiconductor structure having a through semiconductor via (TSV) which includes a semiconductor wafer of a semiconductor material and having a front side and a back side; front end of the line (FEOL) components; an insulative annulus extending from the front side to the back side, the insulative a...

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Bibliographic Details
Main Authors Petrarca Kevin S, Oakley Jennifer A, Volant Richard P, Farooq Mukta G
Format Patent
LanguageEnglish
Published 26.07.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure having a through semiconductor via (TSV) which includes a semiconductor wafer of a semiconductor material and having a front side and a back side; front end of the line (FEOL) components; an insulative annulus extending from the front side to the back side, the insulative annulus having a center including the semiconductor material such that the semiconductor material in the center of the insulative annulus is recessed from the back side to form a recess; a metal filling the recess; a through silicon via (TSV) extending in a straight line from the metal-filled recess, through the center of the semiconductor material in the center of the insulative annulus and into the FEOL components such that there is semiconductor material between the TSV and the insulative annulus.
Bibliography:Application Number: US201514678495