Methods of making a self-aligned channel drift device

• Main Authors: CIAVATTI JEROME, LIU YANXIANG
• Format: Patent
• Language: English
• Published: 19.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An isolation region is formed in a semiconductor substrate to laterally define and electrically isolate a device region and first and second laterally adjacent well regions are formed in the device region. A gate structure is formed above the device region such that the first well region extends below an entirety of the gate structure and a well region interface formed between the first and second well regions is laterally offset from a drain-side edge of the gate structure. Source and drain regions are formed in the device region such that the source region extends laterally from a source-side edge of the gate structure and across a first portion of the first well region to a first inner edge of the isolation region and the drain region extends laterally from the drain-side edge and across a second portion of the first well region.