Capacitor arrangements using a resistive switching memory cell structure

• Main Authors: DINH JOHN, HOLLMER SHANE, KWAN MING SANG, LEWIS DERRIC, BUSKIRK MICHAEL VAN, GOPINATH VENKATESH P, JAMESON JOHN R
• Format: Patent
• Language: English
• Published: 14.06.2016
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

In one embodiment, a capacitive circuit can include: (i) a resistive storage element having a solid electrolyte, a first electrode coupled to a first side of the solid electrolyte, and a second electrode coupled to a second side of the solid electrolyte; (ii) the resistive storage element being configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction to form a conductive path between the first and second electrodes, and being configured to be erased to a high resistance state by application of an erase voltage in a reverse bias direction to substantially dissolve the conductive path; and (iii) a first capacitor having the first electrode coupled to a first side of a first oxide layer, and a third electrode coupled to a second side of the first oxide layer.