Methods of manufacturing a magnetoresistive random access memory device

• Main Authors: PARK JONGUL, KWON HYUNG-JOON, NOH EUN-SUN, KWON SHIN, YOON HYE-JI, KIM CHAE-LYOUNG
• Format: Patent
• Language: English
• Published: 05.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificia...