Memory arrays

• Main Authors: ZHU HONGBIN, KLEIN RITA J, HALLER GORDON A, TRAN LUAN C, HU YUSHI, HOPKINS JOHN D, MELDRIM JOHN M
• Format: Patent
• Language: English
• Published: 15.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the c...