Semiconductor device having power metal-oxide-semiconductor transistor
A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conduct...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
26.01.2016
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Subjects | |
Online Access | Get full text |
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