Semiconductor device having power metal-oxide-semiconductor transistor

• Main Authors: JANG JAE-JUNE, KIM MIN-HWAN, CHANG HOON, JANG DONG-EUN, CHO KYU-HEON
• Format: Patent
• Language: English
• Published: 26.01.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conduct...