SRAM cell and method for manufacturing the same

A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may include: a semiconductor layer; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the semiconductor layer, wherein the first FinFET includes a first fin formed by patt...

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Bibliographic Details
Main Authors LIANG QINGQING, ZHU HUILONG
Format Patent
LanguageEnglish
Published 24.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A SRAM cell and a method for manufacturing the same are disclosed. In one embodiment, the SRAM cell may include: a semiconductor layer; and a first Fin Field Effect Transistor (FinFET) and a second FinFET formed on the semiconductor layer, wherein the first FinFET includes a first fin formed by patterning the semiconductor layer, the first fin having a first top surface and a first bottom surface, wherein the second FinFET includes a second fin formed by patterning the semiconductor layer, the second fin having a second top surface and a second bottom surface, and wherein the first top surface is substantially flush with the second top surface, the first and second bottom surfaces abut against the semiconductor layer, and the height of the second fin is greater than the height of the first fin.
Bibliography:Application Number: US201113509912