Through-substrate via shielding

A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located betwe...

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Bibliographic Details
Main Authors KOTHANDARAMAN CHANDRASEKHARAN, SAFRAN JOHN M, LIN CHUNG-HSUN, KIM DAEIK
Format Patent
LanguageEnglish
Published 30.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor apparatus includes a substrate structure including a silicon substrate layer, a conductive through-substrate via extending through the silicon substrate layer. The apparatus further includes a semiconductor device located in the substrate structure and a conductive wall located between the through-substrate via and the semiconductor device. The conductive wall is in electrical contact with the silicon substrate layer.
Bibliography:Application Number: US201213666319