Semiconductor device having a metal gate and fabricating method thereof

• Main Authors: CHEN CHIEN-HAO, HUANG HSIN-FU, TSAI MINUAN, LIN CHIN-FU, HSU CHI-MAO, CHEN WEI-YU
• Format: Patent
• Language: English
• Published: 28.04.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed...