Dopant metrology with information feedforward and feedback

The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurali...

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Bibliographic Details
Main Authors SALNIK ALEX, TSAI BIN-MING BENJAMIN, NICOLAIDES LENA
Format Patent
LanguageEnglish
Published 24.02.2015
Subjects
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