Dopant metrology with information feedforward and feedback
The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurali...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
24.02.2015
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Subjects | |
Online Access | Get full text |
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