Process for semiconductor circuit

A semiconductor process for forming specific pattern features comprising the steps of forming a target layer, a hard mask layer and a plurality of equally spaced-apart core bodies on a substrate, forming spacers on sidewalls of the core bodies, removing the core bodies so that the spacers are spaced...

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Bibliographic Details
Main Authors WANG ZIH-SONG, MIYAWAKI YOSHIKAZU, LIN SHUNG
Format Patent
LanguageEnglish
Published 11.11.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor process for forming specific pattern features comprising the steps of forming a target layer, a hard mask layer and a plurality of equally spaced-apart core bodies on a substrate, forming spacers on sidewalls of the core bodies, removing the core bodies so that the spacers are spaced-apart on the hard mask layer, using spacers as a mask to pattern the hard mask layer, removing the hard mask bodies outside of a predetermined region, forming photoresists on several outermost hard mask bodies of the predetermined region, and using the photoresists and remaining hard mask bodies as a mask to pattern the target layer.
Bibliography:Application Number: US201213612725