Programmable impedance memory elements, methods of manufacture, and memory devices containing the same

A memory device can include a plurality of memory elements, each including first electrode having a surrounding first electrode side surface in a lateral direction; a memory material surrounding the first electrode side surface in the lateral direction, the memory material being programmable between...

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Bibliographic Details
Main Authors GALLO ANTONIO R, KOUSHAN FOROOZAN SARAH
Format Patent
LanguageEnglish
Published 30.09.2014
Subjects
ELECTRICITY
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Summary:A memory device can include a plurality of memory elements, each including first electrode having a surrounding first electrode side surface in a lateral direction; a memory material surrounding the first electrode side surface in the lateral direction, the memory material being programmable between at least two different impedance states in response to electric fields; and a second electrode formed around the memory material in the lateral direction.
Bibliography:Application Number: US201213431951