Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features
When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placehold...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
29.07.2014
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Subjects | |
Online Access | Get full text |
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