Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features

When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placehold...

Full description

Saved in:
Bibliographic Details
Main Authors BAARS PETER, SCHROEDER VIVIEN, SCHLOESSER TILL
Format Patent
LanguageEnglish
Published 29.07.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placeholder metal region may be removed on the basis of a wet chemical etch recipe followed by the deposition of the electrode materials and the dielectric materials for the capacitive structure without unduly affecting other portions of the metallization system. In this manner, very high capacitance values may be realized on the basis of a very efficient overall manufacturing flow.
AbstractList When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular" metal features, thereby achieving a very efficient overall process flow. At a certain manufacturing stage, the metal of the placeholder metal region may be removed on the basis of a wet chemical etch recipe followed by the deposition of the electrode materials and the dielectric materials for the capacitive structure without unduly affecting other portions of the metallization system. In this manner, very high capacitance values may be realized on the basis of a very efficient overall manufacturing flow.
Author SCHLOESSER TILL
BAARS PETER
SCHROEDER VIVIEN
Author_xml – fullname: BAARS PETER
– fullname: SCHROEDER VIVIEN
– fullname: SCHLOESSER TILL
BookMark eNqNzU0KwjAUBOAsdOHfHd4FBFGkdqso7qvr8kym-iA_JUmFenoregBXwzAfzFSNfPCYKFvBiQ7edDqHSAZP0SAdXBslib8Tk-aWtXzWJkQHQ-IpP0AOma2VF2cJnlKfMhzdOA1i6KZzrv8aasC5i0hzNW7YJix-OVN0Ol4O5yXaUCMNN_DI9bXaFeWqLLb79eYP8gZkhkQP
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US8790975B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US8790975B23
IEDL.DBID EVB
IngestDate Fri Aug 23 07:05:16 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US8790975B23
Notes Application Number: US201113040975
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140729&DB=EPODOC&CC=US&NR=8790975B2
ParticipantIDs epo_espacenet_US8790975B2
PublicationCentury 2000
PublicationDate 20140729
PublicationDateYYYYMMDD 2014-07-29
PublicationDate_xml – month: 07
  year: 2014
  text: 20140729
  day: 29
PublicationDecade 2010
PublicationYear 2014
RelatedCompanies SCHLOESSER TILL
BAARS PETER
GLOBALFOUNDRIES INC
SCHROEDER VIVIEN
RelatedCompanies_xml – name: GLOBALFOUNDRIES INC
– name: BAARS PETER
– name: SCHROEDER VIVIEN
– name: SCHLOESSER TILL
Score 2.9505992
Snippet When forming capacitive structures in a metallization system, such as in a dynamic RAM area, placeholder metal regions may be formed together with "regular"...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal features
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140729&DB=EPODOC&locale=&CC=US&NR=8790975B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3PS8MwFH6MKepNp-L8RQ7SW3GuabccirB2Ywj7gd1kt5EmKRRqO7aK-N_7knXTi97apoTmke99L8l7XwEemJOIjmAurk1YbFMat2zuKs_uqraQXY_H3Jyej8becE5fFu6iBumuFsbohH4acURElEC8l8Zfr342sUKTW7l5jFN8VDwPZn5oVavjJy33xayw5_enk3ASWEHgzyNr_IpenbVYx-2htz7AKLqjs7_6bz1dlLL6zSiDUzicYmd5eQY1lTfgONj9eK0BR6PqvBsvK-htziGLdBp7kWt91mJNpNIQJzojHGGK_EM4EUh8ItWtOhJVkqQ5wfiOvONQsqwquCRb7Wai6UsSvJc4Fb-275BEGZ3PzQWQQX8WDG387OXeRMt5tB-gcwn1vMjVFRDGReIo6iXUU5SyBO3uurLFpUcxKuROE5p_dnP9T9sNnGhb6y3ONruFern-UHfIzWV8b6z6DcjNl1s
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3PT8IwFH4haMSbokb82YPZbRFZN-iBmLBBUPkVAcONdG2XLMGNwIzxv_e1DPSit21dmvWl3_te2_e-AdwxJxJ1wVxcm7DQpjSs2txVnt1QNSEbHg-5OT3vD7zulD7P3FkB4m0tjNEJ_TTiiIgogXjPjL9e_mxiBSa3cn0fxvgofexMmoGVr44ftNwXs4JWsz0aBkPf8v3mdGwNXtGrsyqruy301nsYYTe0zH77raWLUpa_GaVzBPsj7CzJjqGgkjKU_O2P18pw0M_Pu_Eyh976BBZjncaeJlqfNV0RqTTEic4IR5gi_xBOBBKfiHWrjkSVJHFCML4j7ziUxSIvuCQb7Wai6UsSvJc4Fb8275BIGZ3P9SmQTnvid2387PnORPPpeDdA5wyKSZqocyCMi8hR1IuopyhlEdrddWWVS49iVMidClT-7Obin7ZbKHUn_d689zR4uYRDbXe93VljV1DMVh_qGnk6C2-Mhb8BCneaSw
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+comprising+a+capacitor+formed+in+the+metallization+system+based+on+dummy+metal+features&rft.inventor=BAARS+PETER&rft.inventor=SCHROEDER+VIVIEN&rft.inventor=SCHLOESSER+TILL&rft.date=2014-07-29&rft.externalDBID=B2&rft.externalDocID=US8790975B2