Amorphous group III-V semiconductor material and preparation thereof

• Main Author: EINAV MOSHE
• Format: Patent
• Language: English
• Published: 27.05.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2...