Amorphous group III-V semiconductor material and preparation thereof
A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.05.2014
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Subjects | |
Online Access | Get full text |
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