Semiconductor device having a metal gate and fabricating method thereof

The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed...

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Main Authors CHEN CHIEN-HAO, HUANG HSIN-FU, TSAI MINUAN, LIN CHIN-FU, HSU CHI-MAO, CHEN WEI-YU
Format Patent
LanguageEnglish
Published 08.04.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.
AbstractList The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.
Author CHEN CHIEN-HAO
HSU CHI-MAO
HUANG HSIN-FU
CHEN WEI-YU
LIN CHIN-FU
TSAI MINUAN
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TSAI MIN-CHUAN
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HUANG HSIN-FU
CHEN WEI-YU
LIN CHIN-FU
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Snippet The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work...
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device having a metal gate and fabricating method thereof
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