Silicon etch with passivation using plasma enhanced oxidation

A method of etching a silicon layer through a patterned mask is provided. The method uses an etch chamber in which the silicon layer is placed. The method includes (a) providing the silicon layer having the patterned mask formed thereon, (b) providing an etch gas comprising a fluorine containing gas...

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Bibliographic Details
Main Authors CHEBI ROBERT P, WINNICZEK JAROSLAW W
Format Patent
LanguageEnglish
Published 03.12.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of etching a silicon layer through a patterned mask is provided. The method uses an etch chamber in which the silicon layer is placed. The method includes (a) providing the silicon layer having the patterned mask formed thereon, (b) providing an etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas into the etch chamber in which the silicon layer has been placed, (c) generating a plasma from the etch gas, (d) etching features into the silicon layer through the patterned mask using the plasma, and (e) stopping the etch gas. The oxygen and hydrogen containing gas contains water vapor.
Bibliography:Application Number: US201113339301