Light emitting device and method of fabricating a light emitting device
A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier su...
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Format | Patent |
Language | English |
Published |
19.11.2013
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Abstract | A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 mum. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate. |
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AbstractList | A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 mum. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate. |
Author | FU YI-KENG KUO WEI-HUNG LIN SUH-FANG XUAN RONG |
Author_xml | – fullname: LIN SUH-FANG – fullname: XUAN RONG – fullname: FU YI-KENG – fullname: KUO WEI-HUNG |
BookMark | eNrjYmDJy89L5WRw98lMzyhRSM3NLCnJzEtXSEkty0xOVUjMS1HITS3JyE9RyE9TSEtMKspMTgQrSFTIwaaDh4E1LTGnOJUXSnMzKLi5hjh76KYW5MenFhckJqfmpZbEhwZbmFqYGxiaOxkZE6EEAPNPNRw |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US8587017B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US8587017B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:57:48 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US8587017B23 |
Notes | Application Number: US201113070486 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131119&DB=EPODOC&CC=US&NR=8587017B2 |
ParticipantIDs | epo_espacenet_US8587017B2 |
PublicationCentury | 2000 |
PublicationDate | 20131119 |
PublicationDateYYYYMMDD | 2013-11-19 |
PublicationDate_xml | – month: 11 year: 2013 text: 20131119 day: 19 |
PublicationDecade | 2010 |
PublicationYear | 2013 |
RelatedCompanies | FU YI-KENG KUO WEI-HUNG LIN SUH-FANG XUAN RONG INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
RelatedCompanies_xml | – name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE – name: LIN SUH-FANG – name: KUO WEI-HUNG – name: XUAN RONG – name: FU YI-KENG |
Score | 2.9198825 |
Snippet | A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Light emitting device and method of fabricating a light emitting device |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131119&DB=EPODOC&locale=&CC=US&NR=8587017B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKeqbTsV5Iw_St2LX9PpQhPXiEHfBrbK3kaYpDKQdruLf9yTrpg_qW0hOQhLynXOSnAvAnZv1bE-4ps59buuWV5g6EznXXYPz3GAGN6n0HR6OnEFqPc3teQuWW18YFSf0UwVHRERxxHut-PXq-xErUraV6_tsiVXVQzILIq25HcvYMYjAqB_Ek3E0DrUwDNKpNnoJPBsPJipPyK33pBYtw-zHr33plLL6KVGSY9if4GBlfQItUXbgMNwmXuvAwbD578ZiA731KTw-y2s0QSplqUxyITFOWJmTTRZoUhWkYNkm7Q8SMPL2W48zIEk8Cwc6zmixW_0ine7mTs-hXValuJAWSa7wXUapwFOeCcPPKGo-DnMKyqglzC50_xzm8p-2KziS2yi97Xr-NbTr9w9xg2K3zm7Vhn0Br4SIBg |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NS8MwFH-MKc6bTsX5mYPsVuyadl0PRVi7WbX7wLWy20jTFAajHa7iv-9L9qEH9RaSl5CE_N57Sd4HwJ2dtKyOsA2NO9zSzE5maEykXLN1zlOd6dyg0nd4MGwHsfk8taYVmG99YVSc0E8VHBERxRHvpeLXy-9HLF_ZVq7ukzlWFQ_9yPWbm9uxjB2DCPS7bm888kde0_PceNIcvrodCw8mKk_IrfdsGZxXak5vXemUsvwpUfpHsD_GwfLyGCoir0PN2yZeq8PBYPPfjcUN9FYn8BjKazRBKmWpTFIhMU5YnpJ1FmhSZCRjyTrtDxIwsvitxymQfi_yAg1nNNutfhZPdnOnZ1DNi1ycS4skWzg2o1TgKU-E7iQUNZ82a2eUUVMYDWj8OczFP223UAuiQTgLn4Yvl3Aot1R63rWcK6iW7x_iGkVwmdyozfsCNMWK8w |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Light+emitting+device+and+method+of+fabricating+a+light+emitting+device&rft.inventor=LIN+SUH-FANG&rft.inventor=XUAN+RONG&rft.inventor=FU+YI-KENG&rft.inventor=KUO+WEI-HUNG&rft.date=2013-11-19&rft.externalDBID=B2&rft.externalDocID=US8587017B2 |