Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI)

• Main Authors: RADECKER JOERG, STRECK CHRISTOF, KAMMLER THORSTEN
• Format: Patent
• Language: English
• Published: 29.10.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods and provided for fabricating a semiconductor IC having a hardened shallow trench isolation (STI). In accordance with one embodiment the method includes providing a semiconductor substrate and forming an etch mask having an opening exposing a portion the semiconductor substrate. The exposed p...