Semiconductor component with trench insulation and corresponding production method

The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation having a deep isolation trench with a covering insulation layer, a side wall insulation layer and an electrically conductive filling layer, which is electrically conne...

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Bibliographic Details
Main Authors SCHULER FRANZ, TEMPEL GEORG
Format Patent
LanguageEnglish
Published 08.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation having a deep isolation trench with a covering insulation layer, a side wall insulation layer and an electrically conductive filling layer, which is electrically connected to a predetermined doping region of the semiconductor substrate in a bottom region of the trench. The use of a trench contact, which has a deep contact trench with a side wall insulation layer and an electrically conductive filling layer, which is likewise electrically connected to the predetermined doping region of the semiconductor substrate in a bottom region of the contact trench, makes it possible to improve the electrical shielding properties with a reduced area requirement.
AbstractList The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation having a deep isolation trench with a covering insulation layer, a side wall insulation layer and an electrically conductive filling layer, which is electrically connected to a predetermined doping region of the semiconductor substrate in a bottom region of the trench. The use of a trench contact, which has a deep contact trench with a side wall insulation layer and an electrically conductive filling layer, which is likewise electrically connected to the predetermined doping region of the semiconductor substrate in a bottom region of the contact trench, makes it possible to improve the electrical shielding properties with a reduced area requirement.
Author SCHULER FRANZ
TEMPEL GEORG
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RelatedCompanies SCHULER FRANZ
TEMPEL GEORG
INFINEON TECHNOLOGIES AG
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Snippet The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation having a deep isolation...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor component with trench insulation and corresponding production method
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