High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays

• Main Authors: CHEN POCHIANG, ZHOU CHONGWU
• Format: Patent
• Language: English
• Published: 03.09.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods, materials, apparatus and systems are described for implementing high-performance arsenic (As)-doped indium oxide (In2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting di...