Patterned implant of a dielectric layer
At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO...
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Main Author | |
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Format | Patent |
Language | English |
Published |
13.08.2013
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Subjects | |
Online Access | Get full text |
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Summary: | At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO2 or other materials, may be part of a solar cell or other device. |
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Bibliography: | Application Number: US201113310318 |