Methods of making a semiconductor memory device

• Main Authors: HALLER GORDON A, TANG SANH D, DOYLE DANIEL H
• Format: Patent
• Language: English
• Published: 21.05.2013
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

One-transistor (1T) capacitor-less DRAM cells each include a MOS transistor having a bias gate layer that separates a floating body region from a base substrate. The MOS transistor functions as a storage device, eliminating the need of the storage capacitor. Logic "1" is written to and sto...