Semiconductor memory device and semiconductor integrated circuit

A semiconductor memory device includes a plurality of memory cells connected to a common bit line, a plurality of select lines each configured to select at least one of the memory cells, a plurality of drive circuits each configured to drive at least one of the select lines, a sense amplifier config...

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Bibliographic Details
Main Authors MURAKUKI YASUO, IWANARI SHUNICHI
Format Patent
LanguageEnglish
Published 16.04.2013
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Summary:A semiconductor memory device includes a plurality of memory cells connected to a common bit line, a plurality of select lines each configured to select at least one of the memory cells, a plurality of drive circuits each configured to drive at least one of the select lines, a sense amplifier configured to amplify a voltage occurring at the bit line depending on data stored in the selected memory cell. A memory region where the memory cells are provided has a first region and a second region. When the first region is read, a larger number of the select lines are simultaneously driven by the corresponding common drive circuit than those in the second region, and a larger number of the memory cells are simultaneously selected than those in the second region.
Bibliography:Application Number: US201113243312