Thin film transistors and methods of manufacturing the same

• Main Authors: KWON JANG-YEON, SON KYUNG-SEOK, PARK KYUNG-BAE, RYU MYUNG-KWAN, KIM TAE-SANG, JUNG JI-SIM
• Format: Patent
• Language: English
• Published: 08.01.2013
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer...