Thin film transistors and methods of manufacturing the same
A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer...
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| Main Authors | , , , , , |
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| Format | Patent |
| Language | English |
| Published |
08.01.2013
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration. |
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| AbstractList | A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration. |
| Author | KIM TAE-SANG PARK KYUNG-BAE KWON JANG-YEON SON KYUNG-SEOK JUNG JI-SIM RYU MYUNG-KWAN |
| Author_xml | – fullname: KWON JANG-YEON – fullname: SON KYUNG-SEOK – fullname: PARK KYUNG-BAE – fullname: RYU MYUNG-KWAN – fullname: KIM TAE-SANG – fullname: JUNG JI-SIM |
| BookMark | eNqNyjsOgzAMANAM7dDfHXwBloL6UbdWRd2BGVngkEjERrG5f5ceoNNb3t5tWJh27tGGyODjnMAyskY1yQrIIySyIKOCeEjIq8fB1hx5AgsEiomObutxVjr9PDio3-3rU9AiPemCAzFZ3zW3srpfquvzXP5Rvm1KMSI |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| ExternalDocumentID | US8349647B2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US8349647B23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 12:27:56 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US8349647B23 |
| Notes | Application Number: US201113064080 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130108&DB=EPODOC&CC=US&NR=8349647B2 |
| ParticipantIDs | epo_espacenet_US8349647B2 |
| PublicationCentury | 2000 |
| PublicationDate | 20130108 |
| PublicationDateYYYYMMDD | 2013-01-08 |
| PublicationDate_xml | – month: 01 year: 2013 text: 20130108 day: 08 |
| PublicationDecade | 2010 |
| PublicationYear | 2013 |
| RelatedCompanies | KIM TAE-SANG PARK KYUNG-BAE KWON JANG-YEON SON KYUNG-SEOK JUNG JI-SIM RYU MYUNG-KWAN SAMSUNG ELECTRONICS CO., LTD |
| RelatedCompanies_xml | – name: KIM TAE-SANG – name: PARK KYUNG-BAE – name: SON KYUNG-SEOK – name: SAMSUNG ELECTRONICS CO., LTD – name: RYU MYUNG-KWAN – name: KWON JANG-YEON – name: JUNG JI-SIM |
| Score | 2.8662214 |
| Snippet | A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Thin film transistors and methods of manufacturing the same |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130108&DB=EPODOC&locale=&CC=US&NR=8349647B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LSwMxEB5KFfWmVbG-yEH2tth2nyKLsC-K0Ae2K72VZJPAQjct7hb_vkncVi96CwkMk8A8Msn3DcCD39ek6dR0c0xNG9OeiXPmmIy76p3LczFX2OHR2B1m9uvCWbSg2GFhNE_opyZHlBaVS3uvtb_e_BSxYv23snokhZxav6TzIDaa27F0yP2eb8RhkEwn8SQyoijIZsb4LfAVMbrthdJbH6gsWtHsJ--hAqVsfkeU9BQOp1KYqM-gxUQHjqNd47UOHI2a9245bEyvOodn1WET8WJVolrFF03vUSEsKPruAl2hNUclFluFVdDgQySTO1Thkl0ASpN5NDSlFsv9jpfZbK-vdQltsRbsChBzqcwmnjj1fWaT3CGEYTtnFqEDjrlndaH7p5jrf9Zu4GSgmzyoYukttOuPLbuTobYm9_qQvgBRAYWH |
| link.rule.ids | 230,309,786,891,25594,76906 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKc43nYrzmgfpW3FbryJFaLtRdd2G22RvJW0SKKztsB3-fZPYTV_0LSRwOAmcS07yfQfgzu5J0nSimgkmqo5JV8UJNVTKTPHOZZmYCexwODaDhf6yNJYNSLdYGMkT-inJEblFJdzeK-mv1z9FLF_-rSzv45RPFU_DueMr9e2YO-Re11Z81xlMJ_7EUzzPWcyU8ZtjC2J03XK5t96zBDmvyJzeXQFKWf-OKMMj2J9yYXl1DA2at6HlbRuvteEgrN-7-bA2vfIEHkWHTcTSVYYqEV8kvUeJcE7QdxfoEhUMZTjfCKyCBB8intyhEmf0FNBwMPcClWsR7XYcLWY7fbUzaOZFTs8BUZPwbOKBEdumepwYcUyxnlAtJn2GmaV1oPOnmIt_1m6hFczDUTR6Hr9ewmFfNnwQhdMraFYfG3rNw24V38gD-wK4P4h0 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Thin+film+transistors+and+methods+of+manufacturing+the+same&rft.inventor=KWON+JANG-YEON&rft.inventor=SON+KYUNG-SEOK&rft.inventor=PARK+KYUNG-BAE&rft.inventor=RYU+MYUNG-KWAN&rft.inventor=KIM+TAE-SANG&rft.inventor=JUNG+JI-SIM&rft.date=2013-01-08&rft.externalDBID=B2&rft.externalDocID=US8349647B2 |