Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer

In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity...

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Main Authors LENSKI MARKUS, BINDER ROBERT, METZGER JOACHIM, HEMPEL KLAUS, SCHROEDER VIVIEN
Format Patent
LanguageEnglish
Published 30.10.2012
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Abstract In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.
AbstractList In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.
Author LENSKI MARKUS
BINDER ROBERT
METZGER JOACHIM
HEMPEL KLAUS
SCHROEDER VIVIEN
Author_xml – fullname: LENSKI MARKUS
– fullname: BINDER ROBERT
– fullname: METZGER JOACHIM
– fullname: HEMPEL KLAUS
– fullname: SCHROEDER VIVIEN
BookMark eNqNyr0OgjAUhmEGHfy7h3MDLOgAq0bjrsaRlPIBhdKS01MS7t7EeAFO7_C822TlvMMm6d-eB2qi02K8I1X3McgIJ2Qcdabt0oFGiLLUKgHBQgv7GhSEo5bICFQtFL5gZtiFGKOfjWtJUaWYDZisWsD7ZN0oG3D4dZfQ7fq83FNMvkSYlIaDlK9HnhV5XpzO2fGP5QOxg0M3
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US8298894B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US8298894B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:31:16 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US8298894B23
Notes Application Number: US20100785185
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121030&DB=EPODOC&CC=US&NR=8298894B2
ParticipantIDs epo_espacenet_US8298894B2
PublicationCentury 2000
PublicationDate 20121030
PublicationDateYYYYMMDD 2012-10-30
PublicationDate_xml – month: 10
  year: 2012
  text: 20121030
  day: 30
PublicationDecade 2010
PublicationYear 2012
RelatedCompanies LENSKI MARKUS
BINDER ROBERT
METZGER JOACHIM
HEMPEL KLAUS
GLOBALFOUNDRIES INC
SCHROEDER VIVIEN
RelatedCompanies_xml – name: LENSKI MARKUS
– name: GLOBALFOUNDRIES INC
– name: BINDER ROBERT
– name: SCHROEDER VIVIEN
– name: METZGER JOACHIM
– name: HEMPEL KLAUS
Score 2.872055
Snippet In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121030&DB=EPODOC&locale=&CC=US&NR=8298894B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3da8IwED_EjW1vm9uY--IeRt_Kapva9qEMbBUZ-MHU4ZskNoJOq1hl-N_vklW3l-0lhATC5eA-crn7HcCTI5jjeZOJOU48z2SCWaZfrUhzLAWzLcalq2EXW-1qc8Beh-6wANN9LYzGCf3U4IgkUWOS943W16ufIFascyuzZzGlpeVLox_GRv46VmhYjmXEtbDe7cSdyIiicNAz2m-hbwe-H7Aaaesj8qI9lf1Vf6-popTVb4vSOIfjLh2Wbi6gINMSnEb7xmslOGnl_900zUUvu4SZCmujMkOKOuTJbJvpDHGcpqhAh80PXBDNc1SBMczb2yQSvxFit_SsRrHDTG-QipvvcC0XOp6AHAVfq9Z1OOfkgl8BNur9qGkS0aMDg0aD3uF6zjUU02UqbwC551nSrQjm25y5nAZnYnM3IZctCQI3KUP5z2Nu_9m7gzPFaa3ArXso0i3kA1nmjXjUPP0CqaqV5A
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFG8IGvGmqBE_38Hstji2jm2HxYQNgspXBAw30rKSDGEQBjH8977WgV700jRt0rz3kvfZ9vcIebA4tRxnMtHHkePolFNDdytloY8Fp6ZBmbAV7GKrXWkM6MvQHuZIvPsLo3BCPxU4ImrUGPV9rez18qeIFaq3lekjj3Fp8VTv-6GWZccSDcsytLDq17qdsBNoQeAPelr7zXdNz3U9WkVrfYARtith9mvvVfkpZfnbo9RPyGEXD0vWpyQnkiIpBLvGa0Vy1Mruu3GaqV56RqayrA3SDUnqgEXTTapeiEOcgAQd1j9gjjTPQBbGIGtvEwn4RojdYFoNfAup2kATN9vCSsxVPQEYcLaSretgxjAEPydQr_WDho5Ej_YCGg16e_asC5JPFom4JMAcxxB2mVPXZNRmOFgTk9kRhmyR59lRiZT-PObqn717Umj0W81R87n9ek2OpdSVMTduSB45Erfopdf8Tsn3C9plmNQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Work+function+adjustment+in+high-k+metal+gate+electrode+structures+by+selectively+removing+a+barrier+layer&rft.inventor=LENSKI+MARKUS&rft.inventor=BINDER+ROBERT&rft.inventor=METZGER+JOACHIM&rft.inventor=HEMPEL+KLAUS&rft.inventor=SCHROEDER+VIVIEN&rft.date=2012-10-30&rft.externalDBID=B2&rft.externalDocID=US8298894B2