Semiconductor device having semiconductor elements formed inside a resin film substrate
A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided. A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other sur...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
16.10.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided. A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor. |
---|---|
Bibliography: | Application Number: US20080672127 |