Methods of forming semiconductor devices
Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...
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| Main Authors | , , , , , , , , , |
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| Format | Patent |
| Language | English |
| Published |
22.05.2012
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. |
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| AbstractList | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process. |
| Author | NA HOONJOO PARK JUN-WOONG HYUN SANGJIN LEE HYE-LAN LEE HYOSAN CHOI SIYOUNG SEO KANG-ILL CHO HAGJU HONG HYUNG-SEOK SHIN YUGYUN |
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| RelatedCompanies | NA HOONJOO PARK JUN-WOONG HYUN SANGJIN LEE HYE-LAN LEE HYOSAN CHOI SIYOUNG SEO KANG-ILL CHO HAGJU HONG HYUNG-SEOK SHIN YUGYUN SAMSUNG ELECTRONICS CO., LTD |
| RelatedCompanies_xml | – name: HONG HYUNG-SEOK – name: PARK JUN-WOONG – name: SEO KANG-ILL – name: HYUN SANGJIN – name: CHO HAGJU – name: LEE HYOSAN – name: SAMSUNG ELECTRONICS CO., LTD – name: CHOI SIYOUNG – name: SHIN YUGYUN – name: NA HOONJOO – name: LEE HYE-LAN |
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| Snippet | Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Methods of forming semiconductor devices |
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