PMR write with flux choking area
A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent trac...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
27.12.2011
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Subjects | |
Online Access | Get full text |
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Abstract | A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof. |
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AbstractList | A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof. |
Author | BAI ZHIGANG DOVEK MORIS LIU KOWANG WU YAN LIU YUE |
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Notes | Application Number: US20090586249 |
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RelatedCompanies | BAI ZHIGANG HEADWAY TECHNOLOGIES, INC DOVEK MORIS LIU KOWANG WU YAN LIU YUE |
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Snippet | A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the... |
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Title | PMR write with flux choking area |
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