Thermally enhanced single inline package (SIP)

In a method and system for fabricating a thermally enhanced semiconductor device (200, 300) is packaged as a through hole single inline package (SIP). A leadframe (210, 310, 410) having a die pad (220, 320, 420) to attach an IC die (230, 330), a first plurality of conductive leads (240, 340, 430) fo...

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Bibliographic Details
Main Authors BOYD WILLIAM D, COYLE ANTHONY L, HAGA CHRIS E
Format Patent
LanguageEnglish
Published 08.11.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method and system for fabricating a thermally enhanced semiconductor device (200, 300) is packaged as a through hole single inline package (SIP). A leadframe (210, 310, 410) having a die pad (220, 320, 420) to attach an IC die (230, 330), a first plurality of conductive leads (240, 340, 430) formed from a first portion of metal sheet (432), and a second portion of metal sheet (440) disposed on an opposite side of the IC die (230, 330) as the first plurality of conductive leads is stamped from a metal sheet. The first plurality of conductive leads (240, 340, 430) are arranged in a single line and are capable of being through hole mounted in accordance with the SIP. The second portion of metal sheet (440) includes the die pad (420) to form a heat spreader (260, 360) in the form of the metal sheet. The heat spreader (260, 360) provides heat dissipating for the heat generated by the IC die (230, 330).
Bibliography:Application Number: US20090565976