MgO tunnel barriers and method of formation
MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics...
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Format | Patent |
Language | English |
Published |
30.08.2011
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Online Access | Get full text |
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Abstract | MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation. |
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AbstractList | MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation. |
Author | PARKIN STUART STEPHEN PAPWORTH |
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Snippet | MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | MgO tunnel barriers and method of formation |
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