Strained silicon on relaxed sige film with uniform misfit dislocation density
A method for forming a semiconductor substrate structure is provided. A compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted onto the SiGe layer to cause end-of-range damage. Annealing is performed to relax the strained SiGe layer. During the annealing, interst...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
21.06.2011
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Subjects | |
Online Access | Get full text |
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