Partially and fully silicided gate stacks

• Main Authors: SLEIGHT JEFFREY W, CHANG LELAND, MO RENEE TONG
• Format: Patent
• Language: English
• Published: 14.06.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Metal-oxide semiconductor (MOS) devices and techniques for the fabrication thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate; and at least one n-channel field effect transistor (NFET) having a gate stack over the substrate. The NFET gate stack...