Multi-thickness semiconductor with fully depleted devices and photonic integration

• Main Authors: POMERENE ANDREW T S, CONWAY TIMOTHY J, HILL CRAIG M, CAROTHERS DANIEL N, VU VU A
• Format: Patent
• Language: English
• Published: 19.04.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES

Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby d...