Semiconductor device and method of manufacturing a semiconductor device
A semiconductor device is disclosed having a conductive gate structure overlying a semiconductor layer having a major surface. An isolation material is recessed within a trench region below the major surface of the semiconductor layer. An epitaxial layer is formed overlying a portion of the major su...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
22.03.2011
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Subjects | |
Online Access | Get full text |
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