Integrated transistor module and method of fabricating same

An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land wit...

Full description

Saved in:
Bibliographic Details
Main Authors JOSHI RAJEEV D, NOQUIL JONATHAN A, TANGPUZ CONSUELO N
Format Patent
LanguageEnglish
Published 30.11.2010
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Abstract An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
AbstractList An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
Author TANGPUZ CONSUELO N
JOSHI RAJEEV D
NOQUIL JONATHAN A
Author_xml – fullname: JOSHI RAJEEV D
– fullname: NOQUIL JONATHAN A
– fullname: TANGPUZ CONSUELO N
BookMark eNqNyj0OwjAMBtAMMPB3B1-ApRCBxAYCwQzMlWm-lEiNXSXm_iwcgOktb-4mooKZO9zE0Bc2BLLCUlM1LZQ1fAYQS6AMe2sgjRT5VVLHlqSnyhlLN408VKx-Lhxdzo_TdY1RW9SROwisfd53-23jvT82mz_KF3ynMSk
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US7842555B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US7842555B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:02:45 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US7842555B23
Notes Application Number: US20090349140
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101130&DB=EPODOC&CC=US&NR=7842555B2
ParticipantIDs epo_espacenet_US7842555B2
PublicationCentury 2000
PublicationDate 20101130
PublicationDateYYYYMMDD 2010-11-30
PublicationDate_xml – month: 11
  year: 2010
  text: 20101130
  day: 30
PublicationDecade 2010
PublicationYear 2010
RelatedCompanies FAIRCHILD SEMICONDUCTOR CORPORATION
RelatedCompanies_xml – name: FAIRCHILD SEMICONDUCTOR CORPORATION
Score 2.796097
Snippet An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead...
SourceID epo
SourceType Open Access Repository
SubjectTerms APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
Title Integrated transistor module and method of fabricating same
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101130&DB=EPODOC&locale=&CC=US&NR=7842555B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-L8Ig_StyJ2rVWkCP0YU3AbbpW9jSRNZODSYTv8972k7fRF30ICxyXkPpK7-x3AVaZBywV1bepxZruMOTZDv992ONOljX7Gq2yL4e0gdZ9n3qwFi6YWxuCEfhlwRJQojvJeGn29-vnEik1uZXHNFjiVP_anQWzVr2O8X6iTrTgMkvEoHkVWFAXpxBq-Br4ON3leiNp6S3vRGmY_eQt1Ucrqt0Xp78P2GImp8gBaQnVgN2oar3Vg56WOd-OwFr3iEB6eGmCHjJTawBh8D7LMs_WHIFRlpGoGTXJJJGVV9x_1Tgq6FEdA-sk0GtjIxXyz43k62fDbO4a2ypU4AUKlLzlz-Q3v3bvM85lEZ-BOeI6k6CQw2oXun2RO_1k7gz0TEzeAhufQLj_X4gJNbckuzSF9A8SYhJ4
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsX5mQfpWxG71ipShH7R6dYNt8reRpKmY-Da4Tr8972m7fRF30ICxyXkPpK7-x3ATVyAlguqq9TgTNUZ01SGfr-qcVaUNpoxL7Mtwvsg0l-mxrQBi7oWRuKEfklwRJQojvKeS329-vnEcmVu5fqWLXAqe_YnlqtUr2O8X6iTFde2vNHQHTqK41jRWAnfLLMINxmGjdp6x8QXYQGz773bRVHK6rdF8Q9gd4TE0vwQGiJtQ8upG6-1YW9QxbtxWIne-gieejWwQ0zywsBIfA-yzOLNhyA0jUnZDJpkCUkoK7v_pHOypktxDMT3Jk6gIhez7Y5n0XjLb_cEmmmWilMgNDETznR-x7uPOjNMlqAz8CAMLaHoJDDagc6fZM7-WbuGVjAZ9Gf9Xvh6DvsyPi7BDS-gmX9uxCWa3ZxdyQP7Bh7dh4k
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Integrated+transistor+module+and+method+of+fabricating+same&rft.inventor=JOSHI+RAJEEV+D&rft.inventor=NOQUIL+JONATHAN+A&rft.inventor=TANGPUZ+CONSUELO+N&rft.date=2010-11-30&rft.externalDBID=B2&rft.externalDocID=US7842555B2