Optical proximity correction method, optical proximity correction apparatus, and optical proximity correction program, method of manufacturing semiconductor device, design rule formulating method, and optical proximity correction condition calculating method

• Main Authors: NAKAYAMA KOHICHI, KOIKE KAORU
• Format: Patent
• Language: English
• Published: 21.09.2010
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CALCULATING; CINEMATOGRAPHY; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

In the present invention, there is provided an optical proximity correction method including steps of: extracting a gate length distribution of a gate from a pattern shape of the gate of a transistor to be formed on a wafer; calculating electric characteristics of the gate; determining a gate length...