Simulation method using a simulation system that provides information on a transfer pattern of a predetermined mask pattern transferred to a wafer by optical photolithography and method of modifying mask pattern

• Main Author: KAWAKAMI YUKIYA
• Format: Patent
• Language: English
• Published: 21.09.2010
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CALCULATING; CINEMATOGRAPHY; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

A simulation system includes an input acceptance unit that accepts a measured dimension of a transfer pattern; a calculation unit including a light intensity calculation unit that calculates a light intensity at each position, and a modified light intensity calculation unit that adds a modified value including the product of the light intensity and a tentative optical reaction coefficient to the light intensity, thereby giving a modified light intensity; and a decision unit that decides the threshold value and optical reaction coefficient by regression calculation such that a difference between the measured dimension and the calculated dimension becomes minimal under the modified light intensity, with a constant being the threshold value of the light intensity at a pair of edges defining the calculated dimension of the transfer pattern in the simulation.