Field effect transistor

A field effect transistor includes a layer structure made of compound semiconductor (111) provided on a semiconductor substrate (110) made of GaAs or InP, as an operation layer, and employs a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode...

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Bibliographic Details
Main Authors MIYAMOTO HIRONOBU, ANDO YUJI, INOUE TAKASHI, MURASE YASUHIRO, MATSUNAGA KOHJI, OKAMOTO YASUHIRO, OTA KAZUKI, WAKEJIMA AKIO, KASAHARA KENSUKE, NAKAYAMA TATSUO, YAMANOGUCHI KATSUMI, SHIMAWAKI HIDENORI
Format Patent
LanguageEnglish
Published 21.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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