Integrating high-voltage CMOS devices with low-voltage CMOS

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film i...

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Bibliographic Details
Main Authors ENCISO EDWARD, WANG S. JONATHAN, CHEN JOHN, BENGALI SADIQ, COONEY TOM, WEAVER JAMES
Format Patent
LanguageEnglish
Published 24.08.2010
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