LDMOS device and method

An N-channel device (40, 60) is described having a very lightly doped substrate (42) in which spaced-apart P (46) and N (44) wells are provided, whose lateral edges (461, 45) extending to the surface (47). The gate (56) overlies the surface (47) between the P (46) and N (44) wells. The P-well edge (...

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Bibliographic Details
Main Authors YANG HONGNING, ZUO JIANG-KAI, MACARY VERONIQUE C
Format Patent
LanguageEnglish
Published 17.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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