LDMOS device and method
An N-channel device (40, 60) is described having a very lightly doped substrate (42) in which spaced-apart P (46) and N (44) wells are provided, whose lateral edges (461, 45) extending to the surface (47). The gate (56) overlies the surface (47) between the P (46) and N (44) wells. The P-well edge (...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
17.08.2010
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Subjects | |
Online Access | Get full text |
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