Trench field effect transistor and method of making it

• Main Author: PEAKE STEVEN T
• Format: Patent
• Language: English
• Published: 23.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing an insulated gate field effect transistor includes providing a substrate (2) having a low-doped region (4), forming insulated gate trenches (8) and implanting dopants of a first conductivity type at the base of the trenches (8). A body implant is implanted in the low-doped...