Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof

• Main Authors: CHU JACK OON, OUYANG QIQING CHRISTINE
• Format: Patent
• Language: English
• Published: 16.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming and the structure of a strained vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry is described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is...