Semiconductor memory device with internal voltage generator and method for driving the same
A semiconductor memory device can stably supply a high voltage even if not only the PVT (Process, Voltage, and Temperature) fluctuations but also the level fluctuations of the external voltage are caused by the variation of the external environments. The driving force of a standby VPP generating uni...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
15.09.2009
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor memory device can stably supply a high voltage even if not only the PVT (Process, Voltage, and Temperature) fluctuations but also the level fluctuations of the external voltage are caused by the variation of the external environments. The driving force of a standby VPP generating unit and a plurality of active VPP generating units are changed according to the PVT fluctuations. |
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| AbstractList | A semiconductor memory device can stably supply a high voltage even if not only the PVT (Process, Voltage, and Temperature) fluctuations but also the level fluctuations of the external voltage are caused by the variation of the external environments. The driving force of a standby VPP generating unit and a plurality of active VPP generating units are changed according to the PVT fluctuations. |
| Author | KIM KYUNG-WHAN |
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| Notes | Application Number: US20060647381 |
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| RelatedCompanies | HYNIX SEMICONDUCTOR, INC |
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| Snippet | A semiconductor memory device can stably supply a high voltage even if not only the PVT (Process, Voltage, and Temperature) fluctuations but also the level... |
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| Title | Semiconductor memory device with internal voltage generator and method for driving the same |
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