Reduced glitch dynamic logic circuit and method of synthesis for complementary oxide semiconductor (CMOS) and strained/unstrained silicon-on-insulator (SOI)

The present invention implements structures and method for non-delayed clock dynamic logic circuit configurations with output and/or complementary output with reduced glitch and/or mitigating adverse charge-sharing effects for Complementary Oxide Semiconductor (CMOS) and/or mitigating parasitic bipo...

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Main Authors SINGH NIRMAL, RANA AMAR PAL SINGH
Format Patent
LanguageEnglish
Published 30.09.2008
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Abstract The present invention implements structures and method for non-delayed clock dynamic logic circuit configurations with output and/or complementary output with reduced glitch and/or mitigating adverse charge-sharing effects for Complementary Oxide Semiconductor (CMOS) and/or mitigating parasitic bipolar action in Strained/Unstrained Silicon-On-Insulator (SOI) circuits, where insulator may be oxide, nitride of Silicon and the like or Sapphire and the like including a method of synthesis.
AbstractList The present invention implements structures and method for non-delayed clock dynamic logic circuit configurations with output and/or complementary output with reduced glitch and/or mitigating adverse charge-sharing effects for Complementary Oxide Semiconductor (CMOS) and/or mitigating parasitic bipolar action in Strained/Unstrained Silicon-On-Insulator (SOI) circuits, where insulator may be oxide, nitride of Silicon and the like or Sapphire and the like including a method of synthesis.
Author SINGH NIRMAL
RANA AMAR PAL SINGH
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Snippet The present invention implements structures and method for non-delayed clock dynamic logic circuit configurations with output and/or complementary output with...
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SubjectTerms BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Title Reduced glitch dynamic logic circuit and method of synthesis for complementary oxide semiconductor (CMOS) and strained/unstrained silicon-on-insulator (SOI)
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