Methods of manufacturing metal oxide nanowires

• Main Authors: XU CHUNHUA, WOO CHUNG HO, LIU YANG, SHI SAN-QIANG
• Format: Patent
• Language: English
• Published: 12.08.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Metal oxide nanowires are being investigated to make nanodevices and nanosensors. High operation temperatures or vacuum is required in the manufacturing of metal oxide nanowires by existing vapor phase evaporation methods. This invention provides a method of manufacturing metal oxide nanowires by first providing a metal to form a non-linear substantially planar structure defining a surface. The metal is then heated and maintained at a temperature from 300 to 800° C., and then exposed to oxygen and water vapor containing air stream for a sufficient period of time to form the metal oxide nanowires. The oxygen containing air stream flows in a direction substantially parallel to the plane of the structure. Relatively low temperatures may be used and no vacuum is required in this method, thereby reducing the overall manufacturing costs. Further, this method is able to manufacture different densities of the metal oxide nanowires simultaneously.