Method for filling a contact hole and integrated circuit arrangement with contact hole

• Main Authors: SCHUDERER BERTHOLD, PRUEGL KLEMENS, FOERSTER JUERGEN
• Format: Patent
• Language: English
• Published: 24.06.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to p...