Method for filling a contact hole and integrated circuit arrangement with contact hole

A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to p...

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Bibliographic Details
Main Authors SCHUDERER BERTHOLD, PRUEGL KLEMENS, FOERSTER JUERGEN
Format Patent
LanguageEnglish
Published 24.06.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.
Bibliography:Application Number: US20050511851